Electronics Engineer Silicon Sensors R&D (EP-ATL-TRK-2026-117-GRAP)

Responsibilities

• Assemble and test CASSIA sensor prototypes on PCBs.
• Support and improve signal measurements in laboratory measurements, irradiations and test beams.
• Analyse CASSIA2 for optimal signal collection and time resolution.
• Investigate radiation hardness and the change of gain as a function of irradiation.
• Test CASSIA2 on chip amplifier circuits against circuit simulation, characterise the front-end (FE) circuit performance for time resolution and signal-to-noise ratio (SNR).
• Improve the design of CASSIA2 circuits for optimal time resolution in LGAD and SPAD mode.
• Develop concepts for integration of CASSIA pixel designs into asynchronous readout pixel circuits in matrices (CASSIA3 studies).
• Circuit design and implementation, design verification, pre-/post-layout simulations for optimised pixel designs and FE-circuits for large matrices.
• Collaborate closely with engineers, physicists, and technicians in a multidisciplinary team.
• Your profile
• Experience with the assembly, testing, and characterisation of silicon detector modules or similar systems.
• Practical experience with laboratory instrumentation such as probe stations, laser test setups, beam test setups.
• Ability to design PCBs for ASICs/sensors as part of the test system.
• Ability to perform electronic measurements to characterise analogue and digital on-chip circuits.
• Experience in automating laboratory procedures and data acquisition.
• Experience with tools used for the design, integration and verification of ASICs/CMOS sensors.
• Familiarity with data analysis, circuit simulation and electronics debugging.
• Experience working in large, international research collaborations and contributing to common infrastructure or shared facilities.
• Demonstrated ability to plan, prioritise and deliver results under tight schedules.

Requirements

• Knowledge of monolithic CMOS sensors, MAPS, silicon pixel detectors for high energy physics experiments.
• Experience in testing silicon sensors and required laboratory equipment.
• Experience in circuit simulation and characterisation.
• Working experience in ASIC and/or CMOS sensor design and using industry tools for design, implementation, and verification.
• Organised, accurate and independent approach to work.
• Ability to work effectively in multidisciplinary teams and international collaborations.
• Spoken and written English, with a commitment to learn French.
• Eligibility criteria:
• You are a national of a CERN Member or Associate Member State .
• You have a professional background in Electronics or Physics (or a related field) and have either: a Master's degree with 2 to 6 years of post-graduation professional experience;
• or a PhD with no more than 3 years of post-graduation professional experience.
• You have never had a CERN fellow or graduate contract before.
• Job closing date: 15.07.2026 at 23:59 CEST.
• Contract duration: 24 months, with a possible extension up to 36 months maximum.
• Working hours: 40 hours per week
• Job flexibility: Fully Onsite
• Target start date: 01-September-2026
• This position involves:
• Work in Radiation Areas.
• Work during nights, Sundays and official holidays, when required by the needs of the Organization.
• Job reference: EP-ATL-TRK-2026-117-GRAP
• Field of work: Experimental Physics
• Benchmark job: 200050 - Electronics Engineer
• Global Benefits
• A monthly stipend between 6372-7004 Swiss Francs per month (tax free) depending on your degree.
• 30 days of paid leave per year plus 2 weeks annual closure.
• Coverage by CERN's comprehensive health insurance scheme (for yourself, your spouse and children), and membership of the CERN Pension Fund.
• Family, child and infant monthly allowances depending on your individual circumstances.
• A relocation package (installation grant and travel expenses) depending on your individual circumstances.
• Possibility to extend your contract up to 36 months.
• On-the-job and formal training including language classes.
• Overview of CERN - Discover a world where the impossible is made possible!
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Benefits

Additional Information

Dense tracking environments in experiments at CERN's High-Luminosity LHC and future FCC experiments require increased use of timing information in addition to the position measurements provided by pixel detectors. This adds an extra dimension to the available information and is essential for mitigating pile-up effects at high luminosities. The CASSIA Project (CMOS Active SenSor with Internal Amplification) aims to develop monolithic active pixel sensors (MAPS) with internal signal gain and low noise in a widely used CMOS imaging process, targeting a broad range of applications.

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