(Senior) Principal Device Engineer (m/f/d) - GaN Power Devices

About the role

Join Nexperia and drive the development of next-generation GaN power devices. In this senior role, you will provide technical leadership in device architecture, simulation, and optimization-translating advanced device physics into high-performance, manufacturable solutions.

Responsibilities

• Lead device architecture definition and optimization for GaN technologies
• Own performance targets and balance trade-offs across performance, reliability, and manufacturability
• Drive TCAD simulation, modeling, and design to support technology and product development
• Collaborate with cross-functional teams across process, characterization, reliability, and product engineering
• Support industrialization by delivering robust, scalable device concepts
• Your Profile
• Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or related field
• Proven experience in GaN or wide bandgap device development
• Strong expertise in device physics, TCAD simulation, and semiconductor design
• Track record of leading complex, multidisciplinary technical projects
• Analytical, self-driven, and collaborative mindset in an international environment
• Your Team
• Join our growing global GaN team and help shape the future of power discretes. We are seeking talented individuals with deep technical expertise, an open mindset, and a drive to solve complex challenges and turn ideas into practical, scalable solutions.
• Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright © material and the word Nexperia® is a registered trademark.
• D&I Statement
• In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women's groups. Nexperia is committed to increasing women in management positions to 30% by 2030.

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Company Intel

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