Principal Medium Voltage Power MOSFET Design Engineer
ExternalFull-timeOn-site6d ago
ExcelIoTSAFe
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Responsibilities
- Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
- Develop TCAD simulation decks and propose advanced device design concepts
- Analyze wafer-level electrical test results and package-level performance data for each development iteration
- Lead yield improvement activities and support technology transfer to mass production
- Contribute to the development of derivative products based on established and mature technology platforms
- Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field
- Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETs
- Solid understanding of power device physics and semiconductor fabrication processes
- Hands-on experience with TCAD tools and simulation-based device analysis
- Intermediate-level proficiency in both written and spoken English
- At Renesas, you can:
- Launch and advance your career in technical and business roles across four Product Groups and various corporate functions. You will have the opportunities to explore our hardware and software capabilities and try new things.
- Make a real impact by developing innovative products and solutions to meet our global customers' evolving needs and help make people's lives easier, safe and secure.
- Maximize your performance and wellbeing in our flexible and inclusive work environment. Our people-first culture and global support system, including the remote work option and Employee Resource Groups, will help you excel from the first day.
- Are you ready to own your success and make your mark?
- Join Renesas. Let's Shape the Future together.
Benefits
Remote work optionsFlexible schedule
Additional Information
Job Summary: We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization.
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Company Intel
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