Principal Device Engineer

Responsibilities

• Develop and optimise Power Trench MOSFET architectures using advanced TCAD simulation
• Perform electrostatic, thermal and reliability‑relevant simulations to guide device decisions
• Design and refine cell structures, termination schemes, and next‑generation device concepts
• Support technology roadmaps with quantitative trade‑off and feasibility analysis
• Translate simulation insights into process, layout and structural requirements
• Conduct day‑to‑day TCAD simulations, documentation, silicon learning support (splits, DOE, calibration), and troubleshooting of device‑level issues
• Engage in regular technical exchanges with Process Integration, Product Development, Design, Manufacturing and Foundry partners
• Contribute to intellectual property generation and early‑stage concept definition
• What you will deliver
• High‑quality TCAD simulation outputs and device concept evaluations
• Optimised device architectures and termination schemes
• Quantitative trade‑off analyses supporting technology roadmap decisions
• Clear technical documentation and communication of simulation insights
• Contributions to silicon learning cycles and device‑level troubleshooting
• Technical inputs that influence product development and industrialisation
• IP disclosures and innovation proposals
• Strong cross‑functional collaboration across BGMOS and manufacturing partners

Requirements

• Essential requirements
• MSc or PhD in Electrical Engineering, Physics, or a related field
• Several years' experience in device engineering and TCAD‑based technology development
• Strong understanding of semiconductor device physics
• Deep expertise with TCAD tools (e.g. Synopsys Sentaurus)
• Experience with Power MOSFET device concepts, ideally trench‑based
• Ability to analyse performance, reliability and manufacturability trade‑offs
• Strong analytical and problem‑solving mindset
• Clear, structured technical communication skills
• Ability to travel occasionally as required
• Beneficial
• PhD focused on power semiconductor devices
• Industrial or foundry experience in Power MOSFET technology
• Experience with process integration or layout‑driven device optimisation
• Knowledge of high‑field effects, ruggedness (UIS) and reliability mechanisms
• Understanding of foundry developments and process transfers
• Proactive, innovative mindset with the ability to challenge assumptions
• Interview process
• Stage 1: Recruiter Review
• Stage 2: Teams interview
• Stage 3: On site or teams final interview and assessment
• Your benefits will include
• Remuneration & Reward
• Excellent starting salary, Annual Incentive Plan of up to 20%, contributory pension scheme up to 9%, recognition rewards scheme, EV salary sacrifice scheme, income protection, and 12× salary life assurance policy.
• Health & Wellbeing - 33 days annual leave, hybrid and flexible working, flexible benefits scheme, enhanced parental leave, on‑site medical centre, enhanced sick pay, subsidised canteen, employee assistance programme, retail and entertainment discounts, a variety of sports and social clubs.
• Professional Development - Possibility for funded academic support up to PhD level, employee goal setting and development plans, huge growth potential both internally and globally within the business via both management and technical pathways.
• Corporate Social Responsibility & Sustainability - A global commitment to becoming carbon neutral by 2035, working with suppliers who embrace and comply with the Nexperia Supplier Code of Conduct, paid time off for every employee to support charitable work up to four times per year.
• Diversity, Equity & Inclusion - Corporate members of Neurodiversity in Bus

Benefits

Additional Information

At Nexperia Manchester, we are expanding our Advanced Devices (TCAD) capability to accelerate innovation across our Power Trench MOSFET portfolio. As a Principal Device Engineer , you will play a critical role in shaping next‑generation device concepts, driving technology optimisation, and influencing early‑stage decisions that define our future products. You will act as a senior technical contributor within BGMOS, applying first‑principles device physics and advanced TCAD simulation to guide development from concept through to industrialisation. This is a role for a deep technical thinker who enjoys solving complex problems, collaborating across functions, and turning simulation insights into real‑world semiconductor technologies.

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