Principal Engineer, Technology Development Engineering

Requirements

• Excellent analytical and problem-solving skills, with the ability to translate fundamental understanding into practical solutions.
• Experience in memory device characterization, optimization, and performance/power tuning is a plus.
• Knowledge of non-volatile memory technologies (e.g., NAND flash) and/or emerging memory technologies is highly desirable.
• Knowledge of DRAM and/or High Bandwidth Memory (HBM) is a plus.
• Programming and scripting experience in Python, C/C++, or similar languages.
• Demonstrated curiosity and willingness to tackle challenging problems beyond your immediate area of expertise.
• Strong communication and collaboration skills in a cross-functional engineering environment.
• #LI-RT1
• Compensation & Benefits Details
• An employee's pay position within the salary range may be based on several factors including but not limited to (1) relevant education; qualifications; certifications; and experience; (2) skills, ability, knowledge of the

Additional Information

We are seeking a Principal Engineer, Technology Development Engineering to join our innovative team in Milpitas, United States. In this pivotal role, you will lead cutting-edge technology development initiatives, driving semiconductor advancements and shaping the future of our industry. ESSENTIAL DUTIES AND RESPONSIBILITIES: Develop future 3D NAND technologies and contribute to long-term technology roadmaps. Define and evaluate new device architectures, scaling strategies, process innovations, and operating methodologies for advanced memory products. Explore novel materials, device structures, and operating algorithms to improve performance, reliability, power efficiency, density, and cost. Identify technology limitations through first-principles understanding of device physics and develop innovative solutions to overcome them. Characterize NAND flash devices and analyze performance, endurance, retention, and reliability behavior. Develop and optimize device trims and operating conditions to push the boundaries of flash memory performance and reliability. Collaborate across device, process, design, system, and product engineering teams to bring new concepts from research into development. REQUIRED: Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a related discipline plus 3 years of experience. Strong foundation in semiconductor device physics, fabrication processes, electrical characterization, and reliability.

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Company Intel

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