Research Associate (2D Ferroelectric Devices for Neuromorphic Computing)

Responsibilities

• Characterize the 2D ferroelectric polarization with various methods, such as PFM and P-E loop test.
• Design, fabricate and test devices based on 2D ferroelectric materials.
• Confirm the polarization switch with electrical pulses.
• Demonstrate reconfigurable photoresponsivity.
• Demonstrate neuromorphic computing with fabricated devices.
• Collect and analyze the results.
• Draft manuscript and project reports based on the results
• Job Requirements:
• Master's degree in electronics, optical engineering, materials science and engineering, physics or related field from top Universities. Entry level candidates are welcome to apply.
• At least 2 years of technical hands-on experience on 2D ferroelectric materials characterization and device design and fabrication.
• Good publication on 2D ferroelectric materials and devices is compulsory.
• Good publication related to neuromorphic computing is compulsory.
• Familiarity with lithography, 2D materials transfer and PFM characterization.
• Good written and oral communication skills.

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Company Intel

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