We are seeking a motivated and detail-oriented master's student to join our research & development team. The position is focused on optimizing the switching speed of bipolar junction transistor (BJT) technologies via simulation and data analysis. The successful candidate will contribute to the design, simulation, and analysis of high-speed Bipolar transistors, with the goal of improving performance for next-generation integrated circuits.
Responsibilities
Conduct literature reviews on state-of-the-art transistor architectures and switching mechanisms.
Perform device-level simulations (e.g., TCAD) to analyze switching behavior under various conditions.
Investigate the impact of material properties, device geometry, and parasitic elements on switching speed.
Develop and validate models to predict switching performance.
Collaborate with team members to design and test prototype devices.
Document findings and present results in regular team meetings and final reports.
Requirements
Currently enrolled in a master's program in Electrical Engineering, Microelectronics, Physics, or a related field.
Strong understanding of semiconductor device physics, especially diode and BJT.
Experience with simulation tools.
Good communication skills in English (German language skills beneficial) and ability to work independently.
Nexperia · Hamburg, Germany